gf2M303 vishay semiconductor document number 74517 www.vishay.com 5-dec-01 1 new product dual p-channel logic level enhancement-mode mosfet 200 m illion c ell t rench t echnology g en f et features ?advanced trench process technology ?high density cell design for ultra low on-resistance popular sot-23-6l package with copper lead-frame for superior thermal and electrical capabilities ?compact and low profile ? 1.8v rated maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v ds ?0 v gate-source voltage v gs 8 continuous drain current (2) t a = 25? i d 2.3 t j = 150? t a = 70? 1.8 a pulsed drain current (1) i dm ? maximum power dissipation (2) t a = 25? p d 1.15 w t a = 70? 0.73 operating junction and storage temperature range t j , t stg ?5 to 150 ? junction-to-ambient thermal resistance (2) r ja 110 ?/w note: (1) pulse width limited by maximum junction temperature. (2) surface mounted on a 1in 2 2oz. cu pcb (fr-4 material) mechanical data case: sot-23-6l package terminals: leads solderable per mil-std-750, method 2026 marking code: m3 v ds 20v r ds(on) 0.135 ? i d 2.3a mounting pad layout pin configuration (top view) sot-23-6l 1 6 2 5 3 4 gs g 0.037 (0.95) ref. 0.074 (1.9) ref. 0.094 (2.4) 0.028 (0.7) 0.039 (1.07) 0.122 (3.10) 0.114 (2.90) 0.067 (1.70) 0.059 (1.50) 0.118 (3.00) 0.106 (2.70) 0.020 (0.50) 0.010 (0.25) 0.004 (0.10) 0.0005 (0.013) 0.075 (1.90) 0.008 (0.20) 0.004 (0.10) 10 typical 0.039 (1.00) 0.036 (0.90) 0.037 (0.95) top view dimensions in inches and (millimeters)
gf2M303 vishay semiconductor www.vishay.com document number 74517 2 5-dec-01 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 20 v breakdown voltage temp. coefficient ? bv dss / ? t j reference to 25 c, i d = 1ma 8.8 mv/ c gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v gs = 8v, v ds = 0v 100 na zero gate voltage drain current i dss v ds = 16v, v gs = 0v 1 a v ds = 16v, v gs =0v, t j =85 c 10 on-state drain current (1) i d(on) v ds 5v, v gs = 4.5v 5 a v gs = 4.5v, i d = 2.3a 109 135 drain-source on-state resistance (1) r ds(on) v gs = 2.5v, i d = 2.0a 146 180 m ? v gs = 1.8v, i d = 1.7a 205 250 forward transconductance (1) g fs v ds = 5v, i d = 2.3a 5 s dynamic total gate charge (1) q g v ds = 10v, v gs = 4.5v 5.1 7.5 gate-source charge (1) q gs i d = 2.3a 1.0 nc gate-drain charge (1) q gd 1.2 turn-on delay time (1) t d(on) 720 turn-onrise time (1) t r v dd = 8v, r l = 8 ? 45 60 turn-off delay time (1) t d(off) i d ? 1a, v gen = 4.5v 162 200 ns turn-offfall time (1) t f r g = 6 ? 116 160 input capacitance c iss v ds = 10v, v gs = 0v 343 output capacitance c oss f = 1.0mh z 77 pf reverse transfer capacitance c rss 58 source-drain diode maximum diode forward current i s t a = 25 c 1.3 a maximum pulsed diode forward current (2) i sm 8a diode forward voltage (1) v sd v gs = 0v, i s = 1.05a 0.85 1.1 v notes: (1) pulse test; pulse width 300 s, duty cycle 2% (2) pulse width limited by maximum junction temperature g d s v in v dd v gen r g r d v out dut input, v in t d(on) output, v out t on t r t d(off) t off t f inverted 90% 10% 10% 90 % 50% 50% 10% 90% pulse width switching test circuit switching waveforms
gf2M303 vishay semiconductor document number 74517 www.vishay.com 5-dec-01 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 2 6 8 012345 fig. 1 ?output characteristics 0 01 2 34 5 67 8 fig. 4 ?on-resistance vs. drain current 0 2 4 6 8 0 0.5 1 1.5 2 3 2.5 fig. 2 ?transfer characteristics 4 0.8 0.6 1.2 1.4 1.6 1 fig. 5 ?on-resistance vs. junction temperature v gs = --4.5v i d = --2.3a fig. 3 ?threshold voltage vs. temperature i d = --250 a -- i d -- drain-to-source current (a) r ds(on) -- on-resistance ( ? ) -- i d -- drain current (a) -- i d -- drain source current (a) --v gs -- gate-to-source voltage (v) r ds(on) -- on-resistance (normalized) t j -- junction temperature ( c) -- v gs(th) -- gate-to-source threshold voltage (v) (normalized) t j -- junction temperature ( c) -- 50 -- 25 25 50 75 100 125 150 0 -- 50 -- 25 25 50 75 100 125 150 0 0.4 0.6 0.8 1 1.2 1.4 0.2 --v ds -- drain-to-source voltage (v) 0.2 0.4 0.6 0.8 0 12345 fig. 6 ?on-resistance vs. gate-to-source voltage r ds(on) -- on-resistance ( ? ) -- v gs -- gate-to-source voltage (v) 0.1 0.2 0.3 0.4 0.5 0.6 -- 2.5v -- 2.0v -- 1.5v -- 1.0v -- 3.0v v gs = -- 3.5v, -- 4.0v, -- 4.5v, -- 5.0v -- 55 c 25 c t j = 1 2 5 c v ds = -- 10v v gs = --4.5v --1.8v --2.5v t j = 125 c i d = -- 2.3a t j = 25 c
gf2M303 vishay semiconductor www.vishay.com document number 74517 4 5-dec-01 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 0246 810 fig. 7 gate charge fig. 8 capacitance -- v gs -- gate-to-source voltage (v) q g -- gate charge (nc) 6 4 2 8 0.01 0.2 0.6 1 1.4 1.8 2.2 fig. 9 source-drain diode forward voltage -- i s -- source current (a) -- v sd -- source-to-drain voltage (v) 1 0.1 10 0 04 8121620 c -- capacitance (pf) -- v ds -- drain-to-source voltage (v) 100 200 300 400 500 600 f = 1mh z v gs = 0v c iss c oss c rss 0.0001 0.001 0.01 0.01 0.001 0.1 0.1 1 1 10 100 r ja (norm) -- normalized thermal impedance pulse duration (sec.) single pulse d = 0.5 0.2 0.01 0.1 t 1 t 2 p dm 1. duty cycle, d = t 1 /t 2 2. r ja (t) = r ja(norm) *r ja 3. r ja = 110 c/w 4. t j - t a = p dm * r ja (t) 0.05 0.02 fig. 10 thermal impedance 0.0001 0.001 0.1 0.01 0 20 40 60 80 100 120 1 10 100 fig. 11 power vs. pulse duration power (w) pulse duration (sec.) fig. 12 maximum safe operating area -- i d -- drain current (a) -- v ds -- drain-source voltage (v) 0.01 0.1 1 10 100 0.1 1 10 100 v ds = --10a i d = --2.3a t j = 125 c v gs = 0v 25 c 55 c single pulse r ja = 110 c/w t a = 25 c 100 s 10s 1s 1ms 10ms v gs = --10v single pulse r ja = 110 c/w t a = 25 c r ds(on) limit 100ms dc
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